Introduction to Script 3

The GUI allows you to set parameters and conditions related to the NAND Flash Memory (NAND) to be measured.

On the other hand, with Script, almost all of these settings can be set individually, so you can change the settings at any time during the test and continue evaluation.

SETCHN Parameter

Hex 4 digits	Set the channel for measurement using bits
	LSB:Channel 0,   MSB:Channel 15
	In the above figure, 00FF

By the way, Lane settings cannot be done using Script, so please connect using GUI.

The parameters of NAND Setting shown above can be set using the following commands.

SETPRM Parameter１,２,,,, 17

Parameter

1	Hex 4 digits	Select from the vendors below and set by number
	00	Micron	03	Intel	10	Other
	01	Kioxia	04	SanDisk
	02	Samusung	05	Hynix

2	Hex 4 digits	Select from the NAND types below and set the number
	0000	SLC	0004	SLC_3D	0011	MLC_SLCMODE
	0001	MLC	0005	MLC_3D	0012	TLC_SLCMODE
	0002	TLC	0006	TLC_3D	0015	MLC_3D_SLCMODE
			0007	QLC_3D	0016	TLC_3D_SLCMODE

3	Hex 2 digits	Subtype: Indicates our unique control mode type. If you are unsure, please contact us.
	00	Type０
	01	Type１
	02	Type２
	03	Type３

4	Hex 2 digits	interface mode
	00	Asynchronous
	01	Synchronous
	02	ToggleDDR
	03	NV-DDR2

5	Hex 4 digits	Blog size: Number of pages in 1 block
6	Hex 6 digits	Page size: number of bytes per page
7	０ or  1	EDO mode
		0:Disable, 1:Enable
8	Hex 4 digits	Base clock (unit: ns)
		Asynchronous mode: Set from 10ns to 500ns in 1ns steps
		Modes other than Asynchronous mode: Set from 5ns to 250ns in 1ns steps
9	Hex 2 digits	tWH
		Asynchronous mode: 00:BCx1, 01:BCx2, …, 0F:BCx16
		Synchronous mode: Not configurable
		Toggle DDR mode, NV-DDR2 mode: 00:BCx2, 01:BCx4, …, 0F:BCx32
10	Hex 2 digits	tWP
		The setting method is the same as parameter 9.
11	Hex 2 digits	tREH
		Asynchronous mode: 00:BCx1, 01:BCx2, …, 0F:BCx16
		Modes other than Asynchronous mode: Cannot be set
12	Hex 2 digits	tRP
		The setting method is the same as parameter 11.
13	Hex 2 digits	Core voltage (set from 0.90V to 3.50V in 0.05V steps)
		00:0.9V, 01:0.95V, 02:1.00V, …, 32:3.40V, 33:3.45V, 34:3.50V
14	Hex 2 digits	I/O voltage (set from 0.90V to 3.50V in 0.05V steps)
		00:0.9V, 01:0.95V, 02:1.00V, …, 32:3.40V, 33:3.45V, 34:3.50V
15	０ or  1	Programming voltage Vpp
		Valid only when the sub-board is a socket replaceable type.
		Socket fixed type sub-boards are not supported.
		0:Disable, 1:Enable
16	０ or  1	Reference voltage Vref
		0:Disable, 1:Enable
17	０ or  1	Resetting NAND flash memory after voltage setting
		0:Disable, 1:Enable

 In addition, when using an integrated sub-board (introduced on May 13, 2023) that is not a socket-separable (Swappable) type.

For details, please refer to the Operation Guide.

STVOUT Parameter

０ or  1	Whether to output (supply) voltage to NAND
	This setting is valid when the sub-board is a socket replaceable type.
	Socket fixed type sub-boards do not support voltage output control and always output voltage.
	0:Stop, 1:Output

RCPCAL Parameter１,２

Parameter：Calibrates the read clock phase using the specified block.

1	Hex 2 digits	Chip number
2	Hex 4 digits	Block number

As mentioned above, individual settings can be made, so it is also possible to vary the voltage and evaluate its dependence, 

If you need a new NAND or additional parameters, please contact us.